Infineon N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK IPD034N06N3GATMA1
73mm, Maximum Operating Temperature: +175 °C.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 167 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.Infineon N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK IPD034N06N3GATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.