Infineon N-Channel MOSFET, 79 A, 60 V, 3-Pin TO-220AB IRF1018EPBF
Infineon N-Channel MOSFET, 79 A, 60 V, 3-Pin TO-220AB IRF1018EPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.67mm, Maximum Operating Temperature: +175 °C.