Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF
Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.7mm.