Infineon N-Channel MOSFET, 180 A, 100 V, 3-Pin D2PAK IRFS4010TRLPBF
7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.Infineon N-Channel MOSFET, 180 A, 100 V, 3-Pin D2PAK IRFS4010TRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.