Infineon N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90N03S4L02ATMA1
3mm, MPN: IPD90N03S4L-02.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 136 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 2.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.Infineon N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90N03S4L02ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.