Infineon N-Channel MOSFET, 106 A, 75 V, 3-Pin D2PAK IRF3808STRLPBF
Infineon N-Channel MOSFET, 106 A, 75 V, 3-Pin D2PAK IRF3808STRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.