IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-247 IXFH34N50P3
IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-247 IXFH34N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 175 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 695 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.26mm.46mm, Length: 16.