onsemi N-Channel MOSFET, 49 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS8D0N04CTWGOS
5V, Maximum Power Dissipation: 38 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 5mm, Maximum Operating Temperature: +175 °C.onsemi N-Channel MOSFET, 49 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS8D0N04CTWGOS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.