onsemi P-Channel MOSFET, 9.4 A, 60 V, 3-Pin DPAK FQD11P06TM
4 A, 60 V, 3-Pin DPAK FQD11P06TM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 185 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 2.onsemi P-Channel MOSFET, 9.6mm, Maximum Operating Temperature: +150 °C.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 6.