onsemi N-Channel MOSFET, 133 A, 60 V, 4-Pin LFPAK, SOT-669 NVMYS3D3N06CLTWGOS
2V, Maximum Power Dissipation: 100 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101.onsemi N-Channel MOSFET, 133 A, 60 V, 4-Pin LFPAK, SOT-669 NVMYS3D3N06CLTWGOS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.2 mO, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.