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Infineon IGBT, VCE 600 V, PG-TO252-3

About The Infineon IGBT, VCE 600 V, PG-TO252-3, Tensione massima gate emitter: ±20V, MPN: IKD10N60RFATMA1

Infineon IGBT, VCE 600 V, PG-TO252-3, Tensione massima gate emitter: ±20V, MPN: IKD10N60RFATMA1

Componenti Elettronici e Connettori > Semiconduttori > Discreti > IGBT

Infineon IGBT, VCE 600 V, PG-TO252-3

Componenti Elettronici e Connettori > Semiconduttori > Discreti > IGBT

Specifications of Infineon IGBT, VCE 600 V, PG-TO252-3

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Instockinstock

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Infineon IGBT, VCE 600 V, PG-TO252-3
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