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Infineon FP75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V AG-ECONO3-3, Panel Mount

About The Infineon FP75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V AG-ECONO3-3, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 355 W, Dimensions: 122 x 62 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Width: 62mm

Infineon FP75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V AG-ECONO3-3, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 355 W, Dimensions: 122 x 62 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Width: 62mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FP75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V AG-ECONO3-3, Panel Mount

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FP75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V AG-ECONO3-3, Panel Mount

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Infineon FP75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V AG-ECONO3-3, Panel Mount
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