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Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole

About The Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 95 W

Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 95 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole

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Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
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    • Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole

    Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole

    Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 95 W.

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    • Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole

    Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole

    Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 95 W.

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  • Amphenol Communications Solutions