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Toshiba N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S

About The Toshiba N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10mm, Maximum Operating Temperature: +150 °C

Toshiba N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Toshiba N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Toshiba N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S

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Toshiba N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S
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