Infineon IGW75N60H3FKSA1 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 428 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 6.2mJ, Gate Capacitance: 4620pF
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Infineon IGW75N60H3FKSA1 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole
Specifications of Infineon IGW75N60H3FKSA1 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole | |
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Instock | instock |
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