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Vishay P-Channel MOSFET, 185 MA, 60 V, 3-Pin SOT-23 TP0610K-T1-GE3

About The Vishay P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 TP0610K-T1-GE3, Package Type: SOT-23 (TO-236), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm, Length: 3

Vishay P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 TP0610K-T1-GE3, Package Type: SOT-23 (TO-236), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm, Length: 3.04mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay P-Channel MOSFET, 185 MA, 60 V, 3-Pin SOT-23 TP0610K-T1-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay P-Channel MOSFET, 185 MA, 60 V, 3-Pin SOT-23 TP0610K-T1-GE3

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Vishay P-Channel MOSFET, 185 MA, 60 V, 3-Pin SOT-23 TP0610K-T1-GE3
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