IXYS N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L

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IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L

2mm, Maximum Operating Temperature: +150 °C.5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 38.IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L, Mounting Type: Screw Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.

IXYS N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L

IXYS N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.26mm, Maximum Operating Temperature: +150 °C.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 16.

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L

2mm, Maximum Operating Temperature: +150 °C.5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 38.

IXYS N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L

26mm, Maximum Operating Temperature: +150 °C.IXYS N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 16.