IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L, Mounting Type: Screw Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 38.2mm, Maximum Operating Temperature: +150 °C
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IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L
Specifications of IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L | |
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