reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Electronic Components & Power & Connectors
Semiconductors
Discrete Semiconductors
IGBTs
ROHM

ROHM RGW60TS65HRC11 Single IGBT, 30 A 650 V, 3-Pin TO-247N, Through Hole

About The ROHM RGW60TS65HRC11 Single IGBT, 30 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 178 W, Transistor Configuration: Common Emitter

ROHM RGW60TS65HRC11 Single IGBT, 30 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 178 W, Transistor Configuration: Common Emitter

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

ROHM RGW60TS65HRC11 Single IGBT, 30 A 650 V, 3-Pin TO-247N, Through Hole

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of ROHM RGW60TS65HRC11 Single IGBT, 30 A 650 V, 3-Pin TO-247N, Through Hole

Category
Instockinstock

Last Updated

ROHM RGW60TS65HRC11 Single IGBT, 30 A 650 V, 3-Pin TO-247N, Through Hole
More Varieties

Rating :- 9.63 /10
Votes :- 8