ROHM RGW60TS65HRC11 Single IGBT, 30 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 178 W, Transistor Configuration: Common Emitter
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ROHM RGW60TS65HRC11 Single IGBT, 30 A 650 V, 3-Pin TO-247N, Through Hole
Specifications of ROHM RGW60TS65HRC11 Single IGBT, 30 A 650 V, 3-Pin TO-247N, Through Hole | |
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Instock | instock |
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