ROHM RGW80TS65DHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 214 W, Transistor Configuration: Common Emitter
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ROHM RGW80TS65DHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole
Specifications of ROHM RGW80TS65DHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole | |
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Category | |
Instock | instock |
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