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ROHM RGW80TS65DHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole

About The ROHM RGW80TS65DHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 214 W, Transistor Configuration: Common Emitter

ROHM RGW80TS65DHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 214 W, Transistor Configuration: Common Emitter

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

ROHM RGW80TS65DHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of ROHM RGW80TS65DHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole

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ROHM RGW80TS65DHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole
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