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Infineon N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK IPB60R055CFD7ATMA1

About The Infineon N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK IPB60R055CFD7ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Series: IPA60R

Infineon N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK IPB60R055CFD7ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Series: IPA60R

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK IPB60R055CFD7ATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK IPB60R055CFD7ATMA1

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Infineon N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK IPB60R055CFD7ATMA1
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