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IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

About The IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 750 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.

IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 750 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

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IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
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