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Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole

About The 5 W.Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 2

Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 2.5 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole

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Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole
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    • Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole

    Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole

    Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 2.

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    • Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole

    Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole

    5 W.Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 2.

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