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Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

About The Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 330 W

Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 330 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

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Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247
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    • Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

    Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

    Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 330 W.

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    Infineon IGW75N65H5XKSA1 IGBT, 75 A 650 V, 3-Pin TO-247

    Infineon IGW75N65H5XKSA1 IGBT, 75 A 650 V, 3-Pin TO-247.

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    • Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

    Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

    Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 330 W.

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