Infineon FP25R12KE3BOSA1 3 Phase Bridge IGBT Module, 40 A 1200 V, 24-Pin EconoPIM2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Dimensions: 107.5 x 45 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Infineon FP25R12KE3BOSA1 3 Phase Bridge IGBT Module, 40 A 1200 V, 24-Pin EconoPIM2, PCB Mount
Specifications of Infineon FP25R12KE3BOSA1 3 Phase Bridge IGBT Module, 40 A 1200 V, 24-Pin EconoPIM2, PCB Mount | |
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