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Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module, 400 A 650 V AG-EASY3B

About The Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module, 400 A 650 V AG-EASY3B, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 20 mW

Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module, 400 A 650 V AG-EASY3B, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 20 mW

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module, 400 A 650 V AG-EASY3B

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Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module, 400 A 650 V AG-EASY3B
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Last Updated December 28th, 2023 01:40 am

Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module, 400 A 650 V AG-EASY3B

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Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module, 400 A 650 V AG-EASY3B

Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module, 400 A 650 V AG-EASY3B, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 20 mW.

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Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module, 400 A 650 V AG-EASY3B

Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module, 400 A 650 V AG-EASY3B, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 20 mW.

Electronic Components & Power & Connectors

Discrete Semiconductors