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DiodesZetex P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2006UFG-7

About The 5 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2006UFG-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 41 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Length: 3

DiodesZetex P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2006UFG-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 41 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Length: 3.35mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

DiodesZetex P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2006UFG-7

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of DiodesZetex P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2006UFG-7

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DiodesZetex P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2006UFG-7
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