Vishay N-Channel MOSFET, 100 A, 40 V, 3-Pin D2PAK SQM40020E_GE3

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Vishay N-Channel MOSFET, 100 A, 40 V, 3-Pin D2PAK SQM40020E_GE3

41mm, Maximum Operating Temperature: +175 °C.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 10.Vishay N-Channel MOSFET, 100 A, 40 V, 3-Pin D2PAK SQM40020E_GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.

Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin D2PAK SUM60020E-GE3

Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin D2PAK SUM60020E-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.

Vishay N-Channel MOSFET, 100 A, 40 V, 3-Pin D2PAK SQM40020E_GE3

5V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 10.41mm, Maximum Operating Temperature: +175 °C.Vishay N-Channel MOSFET, 100 A, 40 V, 3-Pin D2PAK SQM40020E_GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.

Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin D2PAK SUM60020E-GE3

Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin D2PAK SUM60020E-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.41mm, Maximum Operating Temperature: +175 °C.