Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Pin Count: 3 + Tab, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3
Specifications of Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3 | |
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