Infineon FS75R12W2T4BOMA1 IGBT Module, 107 A 1200 V Module, Panel Mount, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 375 W
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Infineon FS75R12W2T4BOMA1 IGBT Module, 107 A 1200 V Module, Panel Mount
Specifications of Infineon FS75R12W2T4BOMA1 IGBT Module, 107 A 1200 V Module, Panel Mount | |
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