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Infineon FS75R12W2T4BOMA1 IGBT Module, 107 A 1200 V Module, Panel Mount

About The Infineon FS75R12W2T4BOMA1 IGBT Module, 107 A 1200 V Module, Panel Mount, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 375 W

Infineon FS75R12W2T4BOMA1 IGBT Module, 107 A 1200 V Module, Panel Mount, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 375 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FS75R12W2T4BOMA1 IGBT Module, 107 A 1200 V Module, Panel Mount

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FS75R12W2T4BOMA1 IGBT Module, 107 A 1200 V Module, Panel Mount

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Infineon FS75R12W2T4BOMA1 IGBT Module, 107 A 1200 V Module, Panel Mount
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