onsemi Dual N-Channel MOSFET, 6 A, 30 V, 8-Pin SOIC FDS6912A
6 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.onsemi Dual N-Channel MOSFET, 6 A, 30 V, 8-Pin SOIC FDS6912A, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 44 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.