Infineon N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1
1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 98 W, Maximum Gate Source Voltage: -30 V, +30 V, Length: 6.Infineon N-Channel MOSFET, 14.73mm, Maximum Operating Temperature: +150 °C.