onsemi Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN NTLJD3119CTBG
6 A, 20 V, 6-Pin WDFN NTLJD3119CTBG, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.onsemi Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.3 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Length: 2mm, Maximum Operating Temperature: +150 °C.