Toshiba N-Channel MOSFET, 9.3 A, 650 V, 3-Pin DPAK TK9P65W,RQ(S
5V, Maximum Power Dissipation: 80 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 6.5V, Minimum Gate Threshold Voltage: 2.3 A, 650 V, 3-Pin DPAK TK9P65W,RQ(S, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 560 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.Toshiba N-Channel MOSFET, 9.