IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole
26 x 5.IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 325 W, Transistor Configuration: Single, Dimensions: 16.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C.