Infineon Dual P-Channel MOSFET, 2.3 A, 20 V, 8-Pin SOIC IRF7104TRPBF
3 A, 20 V, 8-Pin SOIC IRF7104TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Length: 5mm, Maximum Operating Temperature: +150 °C.Infineon Dual P-Channel MOSFET, 2.