Infineon N-Channel MOSFET, 169 A, 55 V, 3-Pin TO-220AB IRF1405PBF
Infineon N-Channel MOSFET, 169 A, 55 V, 3-Pin TO-220AB IRF1405PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 8.