IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2
5V, Maximum Power Dissipation: 1.IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.3mm, Maximum Operating Temperature: +150 °C.