ROHM Dual P-Channel MOSFET, 2 A, 12 V, 6-Pin TSMT-6 QS6J11TR
25 W, Transistor Configuration: Dual Base, Maximum Gate Source Voltage: -10 V, +10 V, Length: 3mm, Maximum Operating Temperature: +150 °C.3V, Maximum Power Dissipation: 1.ROHM Dual P-Channel MOSFET, 2 A, 12 V, 6-Pin TSMT-6 QS6J11TR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.