Infineon P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P407ATMA1
Infineon P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P407ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 88 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10mm, Maximum Operating Temperature: +175 °C.