Infineon N-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK IPD78CN10NGATMA1
Infineon N-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK IPD78CN10NGATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, MPN: IPD78CN10N G.