ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole
ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole, Maximum Gate Emitter Voltage: 30V, Maximum Power Dissipation: 133 W, Package Type: TO-262, Transistor Configuration: Single, Dimensions: 10.1 x 4.5 x 9mm, Gate Capacitance: 780pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C.