Vishay N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB SIHP8N50D-GE3
7 A, 500 V, 3-Pin TO-220AB SIHP8N50D-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 850 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.51mm, Maximum Operating Temperature: +150 °C.Vishay N-Channel MOSFET, 8.