Vishay N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA90DP-T1-RE3
Vishay N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA90DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.25mm, Maximum Operating Temperature: +150 °C.8V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +20 V, Length: 6.