onsemi P-Channel MOSFET, 8.2 A, 40 V, 8-Pin SOIC FDS4685
onsemi P-Channel MOSFET, 8.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.2 A, 40 V, 8-Pin SOIC FDS4685, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.