Infineon P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB180P04P4L02ATMA1
Infineon P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB180P04P4L02ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Length: 10mm, Maximum Operating Temperature: +175 °C, MPN: IPB180P04P4L-02.