Infineon OptiMOS IPB80N06S2H5ATMA2 N-Kanal, SMD MOSFET 55 V / 80 A, 3-Pin D2PAK (TO-263)
Infineon OptiMOS IPB80N06S2H5ATMA2 N-Kanal, SMD MOSFET 55 V / 80 A, 3-Pin D2PAK (TO-263), Drain-Source-Widerstand max.: 0,0052 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4V, Anzahl der Elemente pro Chip: 1, Transistor-Werkstoff: Si.