IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P
23mm, Maximum Operating Temperature: +150 °C.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 38.IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P, Mounting Type: Screw Mount, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.