onsemi N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 BSS123
8V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.93mm.onsemi N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 BSS123, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.