Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 349 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Gate Capacitance: 2066pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C
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Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
Specifications of Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole | |
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Instock | instock |
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